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Enhanced efficiency of high-speed Si and Si-based PbSe MSM photodiodes with integrated photon-trapping holes in 800 ~ 1550 nm wavelengths

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posted on 2024-01-09, 03:21 authored by Jun Gou, Lixin Liu, Chunyu Li, Jiayue Han, Xiutao Yang, Jin Chen, Zijian Zhang, Zheyuan Xie, He Yu, Zhiming Liu, Jun Wang
We demonstrate theoretically and experimentally that cylindrical-shaped hole array with a small depth and an appropriate period integrated on SOI substrate can enhance infrared absorption due to more bending of light and a higher back reflection. Si MSM photodiode with hole array with a depth of 250 nm exhibits a 3-fold improved EQE of 61%, and an ultrafast impulse response speed of 22 ps enabling a 3dB bandwidth up to 23.9 GHz. PbSe film with a thickness of 80 nm is integrated to broaden the response wavelength. More than 500% EQE enhancement of the Si-based PbSe photodiode with 150-nm-deep photon-trapping holes is achieved at 1550 nm compared to the device without hole structures. These photodiodes offer the potential to drastically improve the efficiency and bandwidth of Si-based detectors in wide band and reduce the cost of infrared sensing and communication system.

History

Funder Name

Natural Science Foundation of Sichuan Province (Grant No. 24NSFSC1465); National Natural Science Foundation of China (Grant No. 62175026); Aeronautical Science Foundation of China (Grant No. 20230024080001)

Preprint ID

111399

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