Epitaxial Growth and Characterization of AlInN Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum

We report on the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emission in the UV wavelength range. During the epitaxial growth of AlInN layer, an AlInN shell is spontaneously formed, resulted in the reduced nonradiative recombination on nanowire surface. The AlInN nanowires exhibit high internal quantum efficiency of ~ 52% at room temperature for emission at 295nm. The peak emission wavelength can be varied from 290 nm to 355 nm by changing the growth condition. Moreover, significantly strong transverse magnetic (TM) polarized emission is recorded which is ~ 4 times stronger compared to the transverse electric (TE) polarized light at 295 nm. This study provides alternative approach for the fabrication of new type of high-performance ultraviolet light-emitters.