posted on 2023-01-12, 14:32authored byJingyang He, Abishek K. Iyer, Michael J. Waters, Sumanta Sarkar, James M. Rondinelli, Mercouri G. Kanatzidis, Venkatraman Gopalan
Infrared laser systems are vital for applications in spectroscopy, communications, and biomedical devices, where infrared nonlinear optical (NLO) crystals are required for broadband frequency down-conversion. Such crystals need to have high non-resonant NLO coefficients, a large bandgap, low absorption coefficient, phase-matchability among other competing demands, e.g., a larger bandgap leads to smaller NLO coefficients. Here, we report the successful growth of single crystals of $\gamma$-NaAsSe$_2$ that exhibit a giant second harmonic generation (SHG) susceptibility of d$_{11}$=590 pm V$^{-1}$ at 2$\mu$m wavelength; this is ~ eighteen times larger than that of commercial AgGaSe$_2$ while retaining a similar bandgap of ~1.87eV, making it an outstanding candidate for quasi-phase-matched devices utilizing d$_{11}$. In addition, $\gamma$-NaAsSe$_2$ is both Type I and Type II phase-matchable, and has a transparency range up to 16$\mu$m wavelength. Thus $\gamma$-NaAsSe2 is a promising bulk NLO crystal for infrared laser applications.
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