Graphene-based fabrication to boost performance of InAs/GaInSb type II superlattice infrared photodetectors

This study demonstrates that graphene can boost the performance of type-II superlattice (T2SL) infrared photodetectors. The devices were fabricated by simply forming graphene transistors or graphene diodes on InAs/GaInSb T2SLs, in contrast to recent structures that are grown using complex crystal growth and bandgap engineering techniques. The long wavelength infrared performance of the T2SL was improved by a factor of 5.5, and the T2SL-based graphene diodes exhibited the lowest noise equivalent power value of 4.09 pW/Hz½ while the T2SL diodes without the graphene exhibited that of 26.7 pW/Hz½. These findings indicate the potential to improve infrared image sensor performance by incorporating graphene.