RETRACTED: High-Performance MoSe2-Based Photodetectors: Fabrication, Characterization, and Enhanced Photoconductive Response for Visible Light Sensing Applications

The remarkable light absorption and electrical properties of transition metal dichalcogenides (TMDs) make them highly suitable for the development of sensitive photodetectors. This study focuses on the optoelectronic properties of a few-layer MoSe2-based photodetector fabricated on a Sio2/Si substrate with Au/Cr electrodes. The device is designed to be responsive to light with a wavelength of 520 nm. The fabrication process involves exfoliating few-layer 2H-phase MoSe2 onto a silicon substrate coated with a 285 nm thick SiO2 dielectric layer, followed by the deposition of Au/Cr electrodes using electron-beam lithography and thermal evaporation techniques. Atomic force microscopy (AFM) measurements confirm the MoSe2 layer thickness to be 8.6 nm, verifying the presence of a few layers. Electrical characterization reveals a pronounced photoconductive effect, with the current increasing as illumination power rises. The Ids-Vds characteristics display linearity, indicating good ohmic contact between MoSe2 and the Au/Cr electrodes. Transfer characteristics (Ids-Vg) measured under varying illumination intensities highlight the gate modulation's role in tuning the device's conductivity, with MoSe2 exhibiting n-type semiconductor behavior. The photodetector demonstrates a stable and reproducible photocurrent response during periodic light on/off switching, with rise and decay times of 0.3-0.4 s and 0.1-0.2 s, respectively, at 520 nm. These results underscore the robust photo responsiveness of MoSe2 and its potential for integration into advanced optoelectronic devices, such as phototransistors and light sensors.<p></p>