highqualityasic.pdf (1.9 MB)
High-quality amorphous Silicon Carbide for hybrid photonic integration deposited at low temperature
Version 2 2023-06-12, 07:15
Version 1 2023-06-10, 10:22
preprintposted on 2023-06-12, 07:15 authored by Bruno Rodriguez, Bruno van der Kolk, Samarth Aggarwal, Naresh Sharma, zizheng Li, Daniel van der Plaats, Thomas Scholte, Jin Chang, Silvania Pereira, Simon Gröblacher, Harish Bhaskaran, Iman Esmaeil Zadeh
Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strength of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second and third-order non-linearities and broad transparency window in the visible and near infrared. However, integrating SiC has been difficult, and current approaches rely on transfer bonding techniques, that are time consuming, expensive and lacking precision in layer thickness. Here, we demonstrate high index Amorphous Silicon Carbide (a-SiC) films deposited at 150°C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of (4.7-5.7)x10^5 corresponding to optical losses between 0.78-1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow loss thin SiN and LiNbO3 platforms.