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Mid-infrared integrated resonators on a III-V platform with Q-factors beyond half a million

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posted on 2025-08-13, 16:17 authored by Luca Lucia, Gia Long Ngo, Mathilde Urbain, Konstantinos Pantzas, Gregoire Beaudoin, Stefano Pirotta, Jean-Michel Manceau, Isabelle Sagnes, Raffaele Colombelli, Adel Bousseksou
We demonstrate mid-IR integrated race-track resonators on a III-V semiconductor platform,InGaAs core epitaxially grown on InP. We have performed a complete characterization of the optical propagation losses at wavelength = 4.6 um and wavelength = 8.5 um, two representative wavelengths for the 1st and 2nd atmospheric transparency windows. We measured losses of 1 dB/cm (TE polarization) and 1.3 dB/cm (TM polarization) at 8.5 um. Substantially lower losses, 0.28 dB/cm, were measured at wavelength = 4.6 um (TM polarization). We then implemented racetrack resonators with straight evanescent couplers. We obtained loaded quality factors larger than 600.000 at wavelength = 4.6 um. These results are promising towards the development of non-linear mid-IR integrated devices with Q factors beyond a million, where the onset of stimulated parametric processes could be reachable.

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