Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity
  Fiber Bragg Grating

Congar, Antoine; Gay, Mathilde; Perin, Georges; Mammez, Dominique; Simon, Jean-Claude; Besnard, Pascal; Rouvillain, Julien; Georges, Thierry; Lablonde, Laurent; Robin, Thierry; Trebaol, Stéphane

doi:10.48550/arXiv.2102.04129

Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity Fiber Bragg Grating

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posted on 2023-06-08, 12:42 authored by Antoine Congar, Mathilde Gay, Georges Perin, Dominique Mammez, Jean-Claude Simon, Pascal Besnard, Julien Rouvillain, Thierry Georges, Laurent Lablonde, Thierry Robin, Stéphane Trebaol

We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode-suppression-ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed.

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Narrow Linewidth near-UV InGaN Laser Diode based on External Cavity Fiber Bragg Grating

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