Nonlinear Transfer of Intense Few Cycle Terahertz Pulse Through Opaque
  n-doped Si

Chefonov, O. V.; Ovchinnikov, A. V.; Agranat, M. B.; Fortov, V. E.; Efimenko, E. S.; Stepanov, A. N.; Save'lev, A. B.

doi:10.48550/arXiv.1805.09611

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Nonlinear Transfer of Intense Few Cycle Terahertz Pulse Through Opaque n-doped Si

preprint

posted on 2023-11-30, 05:46 authored by O. V. Chefonov, A. V. Ovchinnikov, M. B. Agranat, V. E. Fortov, E. S. Efimenko, A. N. Stepanov, A. B. Save'lev

Intense few cycle terahertz pulses exhibit complex non-linear behavior under interaction with heavily n-doped Si. Fast increase in the transmission of a 700 fs pulse (central frequency 1.5 THz) through the Si sample (low field transmission of 0:02 %) saturates at 8 % for the external field of 5 MV/cm and then drops twofold at 20 MV/cm. An electro-optical sampling measurements revealed formation of a single cycle terahertz pulse at this field due to formation of a thin ionized layer by the first intense oscillation of the terahertz field.