posted on 2025-02-07, 17:01authored byEmilia Pruszyńska-Karbownik, Tomasz Fąs, Katarzyna Brańko, Dmitriy Yavorskiy, Bartłomiej Stonio, Rafał Bożek, Piotr Karbownik, Jerzy Wróbel, Tomasz Czyszanowski, Tomasz Stefaniuk, Wojciech Pacuski, Jan Suffczyński
High refractive index (4.4 at 1100 nm), negligibly small absorption in near-infrared spectral range, and ease of processing make MoSe$_2$ a perfect material for applications in near-infrared photonics. So far, implementation of MoSe$_2$-based photonic structures has been hindered by the lack of large surface MoSe$_2$ substrates. The use of molecular beam epitaxy allows the production of homogeneous layers of MoSe$_2$ with a few-inch surface and a thickness controlled at the sub-nm level. In the present work, we design by theoretical calculations and fabricate by a simple lithography process an ultrathin subwavelength grating out of 42-nm thick, epitaxially-grown MoSe$_2$ layer. Our polarization-resolved reflectivity measurements confirm that the gratings host a peculiar type of a confined optical mode that is a bound state in the continuum. Moreover, the fabricated structures enhance the efficiency of the third harmonic generation by over three orders of magnitude as compared to the unstructured MoSe$_2$ layer. The presented results are promising for the realization of flat, ultra-compact devices for lasing, wavefront control, and higher-order topological states of the light.