Optica Open
Browse
arXiv.svg (5.58 kB)

Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

Download (5.58 kB)
preprint
posted on 2023-10-27, 16:00 authored by Ahsan Ali, Chuanliang Wang, Jinyang Cai, Khadga Jung Karki
Wide bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide is a prototypical wide bandgap semiconductor with high optical nonlinearities, large electron transport, and a high breakdown threshold. Integration of silicon carbide in nonlinear photonics requires a systematic analysis of the multiphoton contribution to the device functionality. Here, multiphoton photocurrent in a silicon carbide photodetector is investigated using phase-modulated femtosecond pulses. Multiphoton absorption is quantified using a 1030 nm phase-modulated pulsed laser. Our measurements show that although the bandgap is less than the energy of three photons, only four-photon absorption has a significant contribution to the photocurrent. We interpret the four-photon absorption as a direct transition from the valance to the conduction band at the {\Gamma} point. More importantly, silicon carbide withstands higher excitation intensities compared to other wide bandgap semiconductors making it an ideal system for high-power nonlinear applications.

History

Disclaimer

This arXiv metadata record was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.

Usage metrics

    Categories

    Licence

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC