Quantum Emission in Monolayer WSe2 Transferred onto InP Nanowires

Localized quantum emitters in transition-metal dichalcogenides (TMDs) have recently emerged as solid-state candidates for on-demand sources of single photons. Due to the role of strain in the site-selective creation of TMD emitters, their hybrid integration into photonic structures such as cavities and waveguides is possible using pick-and-place methods. Here we investigate quantum emission from a hybrid structure consisting of a monolayer of WSe2 interfaced with horizontally aligned InP nanowires (NWs). Our experiments reveal multiple narrow and bright emission peaks in the 715-785 nm spectral range and g(2)(0) as low as 0.049, indicating strong antibunching and good single photon purity. The faceted nature of III-V NWs provides unique opportunities for strain engineering, including the potential for placement of emitters on the top surface for optimal coupling. Our findings pave the way for realizing hybrid quantum light sources for integrated quantum photonics that could combine III-V quantum dots with TMD emitters into a single platform.