posted on 2023-09-14, 16:00authored byMarkus Scherrer, Chang-Won Lee, Heinz Schmid, Kirsten E. Moselund
Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those photonic chips to their full potential. Recently, novel concepts involving topological designs introduced a variety of options for tuning device properties such as the desired single mode emission. Here we introduce a novel cavity design that allows to amplify the topological interface mode by deterministic placement of gain material within the topological lattice. The proposed design is experimentally implemented by a selective epitaxy process resulting in Si and InGaAs nanorods embedded within the same topological lattice. This results in the first demonstration of a single-mode laser in the telecom band using the concept of amplified topological modes.
History
Disclaimer
This arXiv metadata record was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.