Spatially controlled fabrication of single NV centers in IIa HPHT
  diamond

Trofimov, S. D.; Tarelkin, S. A.; Bolshedvorskii, S. V.; Bormashov, V. S.; Troshchiev, S. Yu.; Golovanov, A. V.; Luparev, N. V.; Prikhodko, D. D.; Boldyrev, K. N.; Terentiev, S. A.; Akimov, A. V.; Kargin, N. I.; Kukin, N. S.; Gusev, A. S.; Shemukhin, A. A.; Balakshin, Yu. V.; Buga, S. G.; Blank, V. D.

doi:10.48550/arXiv.1911.12429

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Spatially controlled fabrication of single NV centers in IIa HPHT diamond

preprint

posted on 2023-11-30, 19:14 authored by S. D. Trofimov, S. A. Tarelkin, S. V. Bolshedvorskii, V. S. Bormashov, S. Yu. Troshchiev, A. V. Golovanov, N. V. Luparev, D. D. Prikhodko, K. N. Boldyrev, S. A. Terentiev, A. V. Akimov, N. I. Kargin, N. S. Kukin, A. S. Gusev, A. A. Shemukhin, Yu. V. Balakshin, S. G. Buga, V. D. Blank

Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.