Strain Engineering of Epitaxial Pt/Fe Spintronic Terahertz Emitter

Spin-based terahertz (THz) emitters, utilizing the inverse spin Hall effect, are ultra-modern sources for the generation of THz electromagnetic radiation. To make a powerful emitter having large THz amplitude and bandwidth, fundamental understanding in terms of microscopic models is essential. This study reveals important factors to engineer the THz emission amplitude and bandwidth in epitaxial Pt/Fe emitters grown on MgO and MgAl$_2$O$_4$ (MAO) substrates, where the choice of the substrate plays an important role. The THz amplitude and bandwidth are affected by the induced strain in the Fe spin source layer. On the one hand, the THz electric field amplitude is found to be larger when Pt/Fe is grown on MgO even though the crystalline quality of the Fe film is superior when grown on MAO. This is because of the larger defect density, smaller electron relaxation time, and lower electrical conductivity in the THz regime when Fe is grown on MgO. On the other hand, the bandwidth is found to be larger for Pt/Fe grown on MAO and is explained by the uncoupled/coupled Lorentz oscillator models. This study provides an insightful pathway to further engineer metallic spintronic THz emitters in terms of the proper choice of substrate and microscopic properties of the emitter layers.