Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity

III-V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to achieve enhanced light output from even smaller light-emitting diode (LED) chips. However, the most perplexing phenomenon and the most significant challenge in the study of emission properties under high-injection conditions in GaN has always been efficiency droop for decades, where LEDs exhibit a substantial loss in efficiency at high driving currents. In this paper, we present our study on the intrinsic emission properties of high-quality GaN material based on the density of states and the principles of momentum conservation. Our theoretical calculations reveal a momentum distribution mismatch between the non-equilibrium excess electrons and holes, which becomes more significant as the carrier concentration increases. Our excitation-dependent photoluminescence measurements conducted at 6 K exhibited a clear droop for all exciton recombinations, but droop-free for phonon-assisted recombination due to phonons compensating for the momentum mismatch. These findings indicate that the momentum distribution mismatch between the non-equilibrium excess electrons and holes is one of the intrinsic causes of the efficiency droop, which originates from the intrinsic band properties of GaN. These results suggest that proper active region design aimed at reducing this mismatch will contribute to the development of ultra-highly efficient lighting devices in the future.