Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for
  Single-Carrier 1.6 Tb/s Transmission

Wang, Xuanhao; Shang, Chenglin; Pan, An; Cheng, Xingran; Gui, Tao; Yuan, Shuai; Gui, Chengcheng; Zheng, Keshuang; Zhang, Peijie; Song, Xiaolu; Li, Yanbo; Li, Liangchuan; Zeng, Cheng; Xia, Jinsong

doi:10.48550/arXiv.2201.09730

Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for Single-Carrier 1.6 Tb/s Transmission

preprint

posted on 2023-06-08, 12:52 authored by Xuanhao Wang, Chenglin Shang, An Pan, Xingran Cheng, Tao Gui, Shuai Yuan, Chengcheng Gui, Keshuang Zheng, Peijie Zhang, Xiaolu Song, Yanbo Li, Liangchuan Li, Cheng Zeng, Jinsong Xia

We successfully demonstrate a monolithic integrated dual-polarization (DP) IQ modulator based on thin-film lithium niobate (TFLN) platform with a silicon substrate, which consists of IQ modulators, spot-size converters (SSCs) and a polarization rotator combiner (PRC). After coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.

History

Related Materials

1.
URL - References https://doi.org/10.48550/arXiv.2201.09730

Disclaimer

This arXiv metadata record was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.

Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for Single-Carrier 1.6 Tb/s Transmission

History

Related Materials

Disclaimer

Usage metrics

Categories

Keywords

Licence

Exports