Wide-range Emission Wavelength Control of InAs Quantum Dots by Changing Indium Composition in InAlGaAs Partial Capping Layer

This study investigates the emission wavelength control of InAs quantum dots (QDs) grown on InP substrates using molecular beam epitaxy (MBE). By utilizing InAlGaAs partial capping layers with varying indium compositions, the emission wavelengths were tuned across the S, C, L, and U bands, making them applicable for optical communication. The use of lower indium content layers effectively reduced indium interdiffusion during the indium flush process, allowing precise emission wavelength control and strain compensation. These findings offer potential for advanced optical communication and photonics applications using high-quality InAs QDs on InP substrates.